Title :
Gain characteristics of InGaN-GaN quantum wells
Author :
Jiang, Hongtao ; Singh, Jasprit
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A self-consistent approach is used to examine gain and radiative lifetimes in InGaN-GaN quantum-well structures. The effect of high built-in electric fields due to spontaneous polarization and the piezoelectric effect and the screening of these fields by carrier injection is examined. We study how the peak gain and radiative lifetime vary with injection density and well size. We also examine the blue shift in the peak gain energy with carrier injection. Implications for laser design are discussed.
Keywords :
III-V semiconductors; electro-optical effects; gallium compounds; indium compounds; light polarization; piezoelectricity; radiative lifetimes; semiconductor device models; spectral line shift; InGaN-GaN; InGaN-GaN quantum wells; InGaN-GaN quantum-well structures; blue shift; carrier injection; gain characteristics; high built-in electric fields; injection density; ith carrier injection; laser design; peak gain; peak gain energy; piezoelectric effect; radiative lifetime; radiative lifetimes; self-consistent approach; spontaneous polarization; well size; Electron optics; Laser theory; Optical polarization; Optical pumping; Photoluminescence; Piezoelectric effect; Piezoelectric polarization; Quantum well lasers; Semiconductor lasers; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
