DocumentCode :
1374681
Title :
40 Gbit/s transimpedance amplifier in SiGe bipolar technology for the receiver in optical-fibre TDM links
Author :
Mullrich, J. ; Meister, T.F. ; Rest, M. ; Bogner, Werner ; Schopflin, A. ; Rein, H.-M.
Author_Institution :
Ruhr-Univ., Bochum
Volume :
34
Issue :
5
fYear :
1998
fDate :
3/5/1998 12:00:00 AM
Firstpage :
452
Lastpage :
453
Abstract :
A transimpedance amplifier for a 40 Gbit/s optical-fibre electrical TDM system has been realised in an advanced SiGe bipolar technology. Despite its high gain (transimpedance of 2 kΩ in the limiting mode) the complete amplifier of the receiver was put on a single chip. Clear output eye diagrams at a constant (limited) output voltage swing of 0.6 Vp-p were measured at 40 Gbit/s
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; differential amplifiers; digital communication; optical fibre communication; optical receivers; semiconductor materials; time division multiplexing; wideband amplifiers; 40 Gbit/s; SiGe; SiGe bipolar technology; optical-fibre TDM links; receiver; transimpedance amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980268
Filename :
674212
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1374681
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