• DocumentCode
    1375156
  • Title

    Very low threshold current density GSMBE 1.55 μm gain-coupled DFB lasers

  • Author

    Aberkane, N. ; Thedrez, B. ; Gentner, J.L. ; Pinquier, A. ; Voiriot, V. ; Gouezigou, L. Le ; Fernier, B.

  • Author_Institution
    Alcatel Alsthom Recherche, Marcoussis, France
  • Volume
    34
  • Issue
    5
  • fYear
    1998
  • fDate
    3/5/1998 12:00:00 AM
  • Firstpage
    464
  • Lastpage
    465
  • Abstract
    1.55 μm gain-coupled DFB lasers with a periodically etched active layer have been realised using dry-etching and gas source molecular beam epitaxy. Threshold current densities as low as 700 A/cm 2 have been achieved which is an improvement on previous values reported for gain gratings. Optimised active layer etching and cleaning technologies are reported
  • Keywords
    chemical beam epitaxial growth; distributed feedback lasers; optical fabrication; sputter etching; surface cleaning; 1.55 micron; GSMBE; active layer; cleaning technology; dry etching; gain grating; gain-coupled DFB laser; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980371
  • Filename
    674220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1375156