Title :
Very low threshold current density GSMBE 1.55 μm gain-coupled DFB lasers
Author :
Aberkane, N. ; Thedrez, B. ; Gentner, J.L. ; Pinquier, A. ; Voiriot, V. ; Gouezigou, L. Le ; Fernier, B.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
fDate :
3/5/1998 12:00:00 AM
Abstract :
1.55 μm gain-coupled DFB lasers with a periodically etched active layer have been realised using dry-etching and gas source molecular beam epitaxy. Threshold current densities as low as 700 A/cm 2 have been achieved which is an improvement on previous values reported for gain gratings. Optimised active layer etching and cleaning technologies are reported
Keywords :
chemical beam epitaxial growth; distributed feedback lasers; optical fabrication; sputter etching; surface cleaning; 1.55 micron; GSMBE; active layer; cleaning technology; dry etching; gain grating; gain-coupled DFB laser; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980371
