Title :
TEM observation of GaAs/GaAlAs laser diodes degraded in field operation
Author :
Magistrali, F. ; Sala, D. ; Vonzi, M. ; Fantini, F. ; Corticelli, F. ; Migligori, A.
Author_Institution :
Telettra, Vimercate, Italy
Abstract :
Cross-section TEM analysis was applied to the dice of degraded DH GaAs/GaAlAs oxide-stripe laser diodes to enable a deeper understanding of the origin of chip-related failures in the field operation. The technique enabled the growth of dislocation loops confined inside the active layer to be identified as the failure mechanism responsible for the degradation.
Keywords :
III-V semiconductors; aluminium compounds; dislocation loops; failure analysis; gallium arsenide; life testing; reliability; semiconductor junction lasers; transmission electron microscope examination of materials; GaAs-GaAlAs; TEM observation; cross-section TEM analysis; degradation; degraded diodes; failure mechanism; field operation; growth of dislocation loops; laser diodes; origin of chip-related failures; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910037
