InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{\\tau }/f_{\\max } \\sim \\hbox {430/800} \\hbox {GHz}$

Author

Jain, Vibhor ; Lobisser, Evan ; Baraskar, Ashish ; Thibeault, Brian J. ; Rodwell, Mark J.W. ; Griffith, Z. ; Urteaga, M. ; Loubychev, D. ; Snyder, A. ; Wu, Y. ; Fastenau, J.M. ; Liu, W.K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

32

Issue

1

fYear

2011

Firstpage

24

Lastpage

26

Abstract

Abstract-We report an InPZIn_0.53Ga_0.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz f_τ and 800-GHz f_max. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide emitter-base junctions. At peak RF performance, the device is operating at 30 mW/μm² with J_c = 18.4 mA/μm² and V_ce = 1.64 V. The devices show a peak DC common-emitter current gain (β) ~ 20 and V_BR,CEO = 2.5 V.

Keywords

III-V semiconductors; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; nanoelectronics; DC common-emitter current gain; InGaAs-InP; double heterojunction bipolar transistor; dry-etched refractory metal emitter process; dry-etched refractory metals; emitter contact formation; emitter semiconductor; emitter-base junctions; frequency 430 GHz to 800 GHz; size 30 nm to 270 nm; triple mesa process; wet-etch emitter process; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Junctions; Metals; Radio frequency; Transmission line measurements; Heterojunction bipolar transistor (HBT); indium phosphide (InP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2084069

Filename

5629428