DocumentCode :
1375224
Title :
InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous 
Author :
Jain, Vibhor ; Lobisser, Evan ; Baraskar, Ashish ; Thibeault, Brian J. ; Rodwell, Mark J.W. ; Griffith, Z. ; Urteaga, M. ; Loubychev, D. ; Snyder, A. ; Wu, Y. ; Fastenau, J.M. ; Liu, W.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Volume :
32
Issue :
1
fYear :
2011
Firstpage :
24
Lastpage :
26
Abstract :
Abstract-We report an InPZIn0.53Ga0.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz fτ and 800-GHz fmax. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide emitter-base junctions. At peak RF performance, the device is operating at 30 mW/μm2 with Jc = 18.4 mA/μm2 and Vce = 1.64 V. The devices show a peak DC common-emitter current gain (β) ~ 20 and VBR,CEO = 2.5 V.
Keywords :
III-V semiconductors; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; nanoelectronics; DC common-emitter current gain; InGaAs-InP; double heterojunction bipolar transistor; dry-etched refractory metal emitter process; dry-etched refractory metals; emitter contact formation; emitter semiconductor; emitter-base junctions; frequency 430 GHz to 800 GHz; size 30 nm to 270 nm; triple mesa process; wet-etch emitter process; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Junctions; Metals; Radio frequency; Transmission line measurements; Heterojunction bipolar transistor (HBT); indium phosphide (InP);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2084069
Filename :
5629428
Link To Document :
