• DocumentCode
    1375230
  • Title

    Interface-Trap Analysis by an Optically Assisted Charge-Pumping Technique in a Floating-Body Device

  • Author

    Kim, Sungho ; Choi, Sung-Jin ; Choi, Yang-Kyu

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    32
  • Issue
    1
  • fYear
    2011
  • Firstpage
    84
  • Lastpage
    86
  • Abstract
    An optically assisted charge-pumping (CP) technique is proposed for the characterization of interface traps in floating-body (FB) devices. Even without a body contact, majority carriers can be supplied into the FB by light illumination, which contributes to enabling the CP process. Under a strong inversion enabled by a back gate, the front gate triggers the CP process with a designed pulse waveform. Consequently, modulation of the majority-carrier concentration at the front interface is monitored by the change of the drain current. Thus, the interface-trap density is extracted from the monitored drain current and the developed analytical model.
  • Keywords
    MOSFET; carrier density; charge pump circuits; interface states; phototransistors; silicon-on-insulator; drain current; floating-body device; interface-trap analysis; light illumination; majority-carrier concentration; optically assisted charge-pumping technique; pulse waveform; Charge pumps; Logic gates; Optical device fabrication; Optical pulses; Optical variables measurement; Transient analysis; Charge pumping; floating-body (FB); interface trap; silicon-on-insulator MOS field-effect transistor (FET);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2084561
  • Filename
    5629429