DocumentCode :
1375274
Title :
A Degenerately Doped 
Bipolar Junction Transistor
Author :
Yalon, E. ; Elias, D. Cohen ; Gavrilov, A. ; Cohen, S. ; Halevy, R. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
32
Issue :
1
fYear :
2011
Firstpage :
21
Lastpage :
23
Abstract :
An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 Ω · μm2.
Keywords :
bipolar transistors; gallium arsenide; indium compounds; semiconductor doping; In0.53Ga0.47As; base metal; bipolar junction transistor; conduction; doped base; emitter efficiency; emitter layer; emitter metal; high-frequency transistor; state density; valence band; Capacitance; Charge carrier processes; Heterojunction bipolar transistors; Junctions; Resistance; Semiconductor diodes; Bipolar junction transistor (BJT); heterojunction bipolar transistor (HBT);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2084557
Filename :
5629435
Link To Document :
