DocumentCode
1375410
Title
Low-Noise Parametric Resonant Amplifier
Author
Lee, Wooram ; Afshari, Ehsan
Author_Institution
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Volume
58
Issue
3
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
479
Lastpage
492
Abstract
We propose a resonant parametric amplifier with an enhanced noise performance by exploiting the noise-squeezing effect. Noise squeezing occurs through the phase-sensitive amplification process and suppresses one of the two quadrature components of the input noise. When the input signal is only in the direction of the nonsuppressed quadrature component, squeezing can lower that noise figure by almost 3 dB. The resonant structure of the proposed amplifier is inspired by a Fabry-Perot laser amplifier to achieve the squeezing effect using a low number of LC elements. We design and simulate the proposed noise-squeezing parametric amplifier in a conventional 65-nm CMOS process. A minimum noise-squeezing factor of -0.35 dB is achieved with a signal gain of 26 dB for one quadrature component of a 10-GHz narrow-band signal.
Keywords
CMOS integrated circuits; Fabry-Perot resonators; low noise amplifiers; parametric amplifiers; CMOS process; Fabry-Perot laser amplifier; enhanced noise performance; frequency 10 GHz; gain 26 dB; low noise parametric resonant amplifier; noise-squeezing effect; noise-squeezing factor; nonsuppressed quadrature component; size 65 nm; Distributed system; low-noise amplifier (LNA); noise squeezing; nonlinear capacitor; parametric amplification; phase matching; phase-sensitive gain;
fLanguage
English
Journal_Title
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher
ieee
ISSN
1549-8328
Type
jour
DOI
10.1109/TCSI.2010.2072370
Filename
5629457
Link To Document