• DocumentCode
    1375410
  • Title

    Low-Noise Parametric Resonant Amplifier

  • Author

    Lee, Wooram ; Afshari, Ehsan

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    58
  • Issue
    3
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    479
  • Lastpage
    492
  • Abstract
    We propose a resonant parametric amplifier with an enhanced noise performance by exploiting the noise-squeezing effect. Noise squeezing occurs through the phase-sensitive amplification process and suppresses one of the two quadrature components of the input noise. When the input signal is only in the direction of the nonsuppressed quadrature component, squeezing can lower that noise figure by almost 3 dB. The resonant structure of the proposed amplifier is inspired by a Fabry-Perot laser amplifier to achieve the squeezing effect using a low number of LC elements. We design and simulate the proposed noise-squeezing parametric amplifier in a conventional 65-nm CMOS process. A minimum noise-squeezing factor of -0.35 dB is achieved with a signal gain of 26 dB for one quadrature component of a 10-GHz narrow-band signal.
  • Keywords
    CMOS integrated circuits; Fabry-Perot resonators; low noise amplifiers; parametric amplifiers; CMOS process; Fabry-Perot laser amplifier; enhanced noise performance; frequency 10 GHz; gain 26 dB; low noise parametric resonant amplifier; noise-squeezing effect; noise-squeezing factor; nonsuppressed quadrature component; size 65 nm; Distributed system; low-noise amplifier (LNA); noise squeezing; nonlinear capacitor; parametric amplification; phase matching; phase-sensitive gain;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2010.2072370
  • Filename
    5629457