Numerical Evaluation of the Short-Circuit Performance of 3.3-kV CIGBT in Field-Stop Technology

Author

Long, Hong Yao ; Luther-King, Ngwendson ; Sweet, Mark R. ; Narayanan, Ekkanath Madathil Sankara

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Sheffield, Sheffield, UK

Volume

27

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

2673

Lastpage

2679

Abstract

In this paper, the short-circuit performance of a conventional 3.3-kV clustered insulated gate bipolar transistor (CIGBT) in field-stop (FS) technology is evaluated through extensive 2-D numerical simulations. For comparison, an equivalent 3.3-kV FS IGBT is considered. The conventional CIGBT shows superior performance of lower on-state voltage drop and saturation current densities in comparison to an equivalent IGBT. Further improvements to the CIGBT performance can be obtained without sacrificing on-state voltage drop by using a PMOS trench gate. The charge balance and electric field distribution with the varying n-buffer thickness at short-circuit condition are analyzed in detail.

Keywords

insulated gate bipolar transistors; numerical analysis; power MOSFET; power bipolar transistors; 2D numerical simulations; CIGBT; FS technology; PMOS trench gate; charge balance; clustered insulated gate bipolar transistor; electric field distribution; field-stop technology; n-buffer thickness; numerical evaluation; on-state voltage drop; short-circuit condition; short-circuit performance; voltage 3.3 kV; Anodes; Cathodes; Circuit optimization; Current density; Electric fields; Insulated gate bipolar transistors; Logic gates; Clustered insulated gate bipolar transistor (CIGBT); insulated gate bipolar transistor (IGBT); short circuit;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2011.2175949

Filename

6080735