Title :
Effect of Self-Assembled Monolayer (SAM) on the Oxide Semiconductor Thin Film Transistor
Author :
Cho, Seung-Hwan ; Lee, Yong-Uk ; Lee, Jeong-Soo ; Jo, Kang-Moon ; Kim, Bo Sung ; Kong, Hyang-Shik ; Kwon, Jang-Yeon ; Han, Min-Koo
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
In this paper, we proposed the self-assembled monolayer (SAM) as a protection layer against plasma and chemically induced damages to the back interface of an oxide semiconductor during the deposition of the passivation layer. When a thin-film transistor (TFT) is passivated with plasma-enhanced chemical-vapor deposition (PECVD) SiOx and solution-based materials, the back interface of the oxide semiconductor could be exposed to plasma and chemically induced damages, respectively. We employed SAMs on the back surface of the oxide semiconductor prior to the passivation process to suppress such damage. The hydrophobic Cl-SAM (3-chloropropyltriethoxysilane) suppressed the degradation in mobility and subthreshold slope (SS) due to ion bombardment during plasma treatment. The hydrophobic CH3-SAM (octyltriethoxysilane) successfully blocked chemically induced damage due to solution-based passivation.
Keywords :
monolayers; organic compounds; passivation; plasma CVD; self-assembly; thin film transistors; PECVD; SAM effect; SS; chemically induced damage; hydrophobic 3-chloropropyltriethoxysilane suppression; hydrophobic CH3-SAM; hydrophobic Cl-SAM suppression; hydrophobic octyltriethoxysilane; mobility degradation; oxide semiconductor thin film transistor; passivation layer deposition; plasma treatment; plasma-enhanced chemical-vapor deposition; protection layer; self-assembled monolayer effect; subthreshold slope; Educational institutions; Logic gates; Passivation; Plasmas; Solvents; Thin film transistors; Back interface; oxide semiconductor; self- assembled monolayer (SAM); solution-based passivation;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2011.2169936
