Title :
Super low noise HEMT using focused ion beam lithography
Author :
Nagahama, Kazuhiro ; Nakanishi, Masaki ; Sasaki, Yutaka ; Hosono, Keita ; Morimoto, Hiroaki ; Katoh, T. ; Hirano, R. ; Murotani
Author_Institution :
Mitsubishi Electr. Corp., Hyogo
fDate :
2/18/1988 12:00:00 AM
Abstract :
Focused ion beam lithography is applied for the first time to low noise HEMTs for delineating a mushroom shaped quarter micron gate. The very low noise performance obtained, which is of 0.68 and 0.83 dB minimum noise figure at 12 and 18 GHz respectively, shows that focused ion beam lithography is very promising for super low noise HEMT applications
Keywords :
high electron mobility transistors; ion beam lithography; solid-state microwave devices; 0.68 to 0.83 dB; 12 to 18 GHz; MODFET; SHF; fabrication; focused ion beam lithography; high electron mobility transistor; low noise HEMT; mushroom shaped; quarter micron gate; solid state microwave devices;
Journal_Title :
Electronics Letters
