• DocumentCode
    1375799
  • Title

    Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors

  • Author

    Towe, Elias ; Pan, Dong

  • Author_Institution
    Lab. for Opt. & Quantum Electron., Virginia Univ., Charlottesville, VA, USA
  • Volume
    6
  • Issue
    3
  • fYear
    2000
  • Firstpage
    408
  • Lastpage
    421
  • Abstract
    Semiconductor quantum-dot nanostructures are interesting objects for fundamental as well as practical reasons. Fundamentally, they can form the basis of systems in which to study the quantum mechanics of electrons confined in zero-dimensional (0-D) space. In practice, the dots can be embedded in the active regions of a new class of electronic and optoelectronic devices with novel functionalities. This paper reviews the state-of-the-art in the use of these objects in infrared detectors. It describes the progress, challenges, and projections for continued development of normal-incidence intersublevel detectors operating in the spectral region between 6 and 20 /spl mu/m.
  • Keywords
    Infrared detectors; Photodetectors; Quantum well devices; Reviews; Semiconductor quantum dots; 6 to 20 mum; infrared photodetectors; normal-incidence intersublevel detectors; quantum mechanics; self assembled dots; semiconductor quantum-dot nanostructures; Electromagnetic radiation; Infrared detectors; Optical sensors; Photodetectors; Quantum cascade lasers; Quantum dots; Quantum mechanics; Semiconductor materials; Semiconductor nanostructures; Temperature;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/2944.865096
  • Filename
    865096