High-speed and low-noise avalanche photodiode operating at 1.06 /spl mu/m

Author

Yuan, P. ; Baklenov, O. ; Nie, H. ; Holmes, A.L., Jr. ; Streetman, B.G. ; Campbell, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

6

Issue

3

fYear

2000

Firstpage

422

Lastpage

425

Abstract

Previously, it has been demonstrated that resonant-cavity-enhanced, quantum-dot avalanche photodiodes can achieve a good gain and high quantum efficiency at 1.06 /spl mu/m. In our new effort, these devices have shown RC-limited bandwidths of 35 GHz at low gain and gain-bandwidth products as high as 220 GHz. The achievable gain has been increased from /spl sim/18 to greater than 50 while keeping the quantum efficiency high. These photodiodes also exhibited low avalanche noise (k=0.24), low dark current (less than 100 nA at 90% of the breakdown voltage), and low-breakdown voltage (/spl sim/17 V).

Keywords

Avalanche photodiodes; Quantum well devices; Semiconductor device breakdown; Semiconductor device noise; Semiconductor quantum dots; 1.06 mum; 17 V; 35 GHz; RC-limited bandwidths; breakdown voltage; gain; gain-bandwidth products; high-speed; low avalanche noise; low dark current; quantum efficiency; resonant-cavity-enhanced quantum-dot avalanche photodiodes; Absorption; Avalanche photodiodes; Bandwidth; Breakdown voltage; Dark current; Gallium arsenide; Neodymium; Photodetectors; Quantum dots; Resonance;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.865097

Filename

865097