Abstract :
The author discusses a potential method for commercial production of GaN substrates, developed by a UK company, NanoGaN. Their nanocolumn growth technique is used to grow high-quality nanosized gallium nitride wafers on sapphire substrate. This method is based on the vapour deposition of GaN thin film on substrate, forming an array of nanometer-size holes in the surface of gallium, then producing gallium nitride layer by layer. The described approach can produce high quality GaN crystals with very few defects.
Keywords :
III-V semiconductors; crystal defects; gallium compounds; nanofabrication; nanostructured materials; semiconductor growth; semiconductor thin films; vapour deposition; wide band gap semiconductors; Al2O3; GaN; NanoGaN; crystal defects; crystal method; high quality gallium nitride crystals; nanometer-size holes; nanosized wafer growth; sapphire substrate; thin film deposition; vapour deposition; Buildings; Crystals; Diode lasers; Electrical engineering; Gallium nitride; Horses; III-V semiconductor materials; Optical materials; Semiconductor laser arrays; Substrates;
