DocumentCode
1375837
Title
Crystal method
Author
Stevenson, Richard
Volume
47
Issue
1
fYear
2010
Firstpage
52
Lastpage
57
Abstract
The author discusses a potential method for commercial production of GaN substrates, developed by a UK company, NanoGaN. Their nanocolumn growth technique is used to grow high-quality nanosized gallium nitride wafers on sapphire substrate. This method is based on the vapour deposition of GaN thin film on substrate, forming an array of nanometer-size holes in the surface of gallium, then producing gallium nitride layer by layer. The described approach can produce high quality GaN crystals with very few defects.
Keywords
III-V semiconductors; crystal defects; gallium compounds; nanofabrication; nanostructured materials; semiconductor growth; semiconductor thin films; vapour deposition; wide band gap semiconductors; Al2O3; GaN; NanoGaN; crystal defects; crystal method; high quality gallium nitride crystals; nanometer-size holes; nanosized wafer growth; sapphire substrate; thin film deposition; vapour deposition; Buildings; Crystals; Diode lasers; Electrical engineering; Gallium nitride; Horses; III-V semiconductor materials; Optical materials; Semiconductor laser arrays; Substrates;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.2010.5372502
Filename
5372502
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