Title :
Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen
Author :
Foad, M.A. ; Smart, A.P. ; Watt, M. ; Sotomayor Torres, C.M. ; Wilkinson, C.D.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
It was found that RIE using CH4/H2 is a high resolution dry etching technique which is suitable for a variety of II-VI semiconductors. The optimum conditions for etching of ZnTe are given. The quality of surfaces etched under these conditions has been examined using XPS and Raman spectroscopy, both techniques indicating little overt damage.
Keywords :
II-VI semiconductors; Raman spectroscopy; X-ray photoelectron spectra; sputter etching; zinc compounds; II-VI semiconductors; RIE; Raman spectroscopy; XPS; ZnTe; high resolution dry etching technique; methane mixture; optimum conditions; quality of surfaces etched; reactive ion etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910047
