• DocumentCode
    1375847
  • Title

    Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen

  • Author

    Foad, M.A. ; Smart, A.P. ; Watt, M. ; Sotomayor Torres, C.M. ; Wilkinson, C.D.W.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • Volume
    27
  • Issue
    1
  • fYear
    1991
  • Firstpage
    73
  • Lastpage
    75
  • Abstract
    It was found that RIE using CH4/H2 is a high resolution dry etching technique which is suitable for a variety of II-VI semiconductors. The optimum conditions for etching of ZnTe are given. The quality of surfaces etched under these conditions has been examined using XPS and Raman spectroscopy, both techniques indicating little overt damage.
  • Keywords
    II-VI semiconductors; Raman spectroscopy; X-ray photoelectron spectra; sputter etching; zinc compounds; II-VI semiconductors; RIE; Raman spectroscopy; XPS; ZnTe; high resolution dry etching technique; methane mixture; optimum conditions; quality of surfaces etched; reactive ion etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910047
  • Filename
    60812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1375847