Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In/sub x/Ga/sub 1-x/As quantum wells

Author

Liu, Wen-Chau ; Laih, Lih-Wen ; Wu, Cheng-Zu ; Shiou-Ying Chen ; Tsai, Jung-Hui

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

18

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

129

Lastpage

131

Abstract

An interesting multiple negative-differential-resistance (MNDR) device, based on an AlGaAs-InGaAs-GaAs metal-insulator-semiconductor (MIS)-like structure, has been fabricated and demonstrated. Three and six switching phenomena have been observed at room temperature and -105/spl deg/C, respectively. The impressive MNDR behaviors are believed to be caused by the sequential accumulation process of carriers at In/sub x/Ga/sub 1-x/As subwells and the successive barrier lowering and potential redistribution effects. These effects yield the step by step enhancement of tunneling through the "insulated" AlGaAs barrier. It is known that, from experimental results, the temperature variation plays an important role on carriers transport and experimental current-voltage (I-V) characteristics.

Keywords

III-V semiconductors; MIS devices; gallium arsenide; indium compounds; negative resistance devices; semiconductor quantum wells; InGaAs; MNDR device; barrier lowering; carrier transport; current-voltage characteristics; metal-insulator-semiconductor structure; multiple negative-differential-resistance; potential redistribution; step-compositioned In/sub x/Ga/sub 1-x/As quantum well; switching; tunneling; Complexity theory; Logic circuits; Logic devices; Metal-insulator structures; Molecular beam epitaxial growth; Signal generators; Signal processing; Temperature; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.563305

Filename

563305