Title :
Observation of the multiple negative-differential-resistance of metal-insulator-semiconductor-like structure with step-compositioned In/sub x/Ga/sub 1-x/As quantum wells
Author :
Liu, Wen-Chau ; Laih, Lih-Wen ; Wu, Cheng-Zu ; Shiou-Ying Chen ; Tsai, Jung-Hui
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/1/1997 12:00:00 AM
Abstract :
An interesting multiple negative-differential-resistance (MNDR) device, based on an AlGaAs-InGaAs-GaAs metal-insulator-semiconductor (MIS)-like structure, has been fabricated and demonstrated. Three and six switching phenomena have been observed at room temperature and -105/spl deg/C, respectively. The impressive MNDR behaviors are believed to be caused by the sequential accumulation process of carriers at In/sub x/Ga/sub 1-x/As subwells and the successive barrier lowering and potential redistribution effects. These effects yield the step by step enhancement of tunneling through the "insulated" AlGaAs barrier. It is known that, from experimental results, the temperature variation plays an important role on carriers transport and experimental current-voltage (I-V) characteristics.
Keywords :
III-V semiconductors; MIS devices; gallium arsenide; indium compounds; negative resistance devices; semiconductor quantum wells; InGaAs; MNDR device; barrier lowering; carrier transport; current-voltage characteristics; metal-insulator-semiconductor structure; multiple negative-differential-resistance; potential redistribution; step-compositioned In/sub x/Ga/sub 1-x/As quantum well; switching; tunneling; Complexity theory; Logic circuits; Logic devices; Metal-insulator structures; Molecular beam epitaxial growth; Signal generators; Signal processing; Temperature; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
