Title :
0.12-μm gate III-V nitride HFET´s with high contact resistances
Author :
Burm, J. ; Chu, K. ; Schaff, W.J. ; Eastman, L.F. ; Khan, Muhammad Asad ; Qisheng Chen ; Yang, J.W. ; Shur, M.S.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
4/1/1997 12:00:00 AM
Abstract :
HFET´s with 0.12-μm gate length were fabricated on a III-V nitride wafer. The contact resistance from unannealed Ti/Au ohmic contact was 10 /spl Omega//spl middot/mm. Even with this relatively high contact resistance, fT of 46.9 GHz and fmax of 103 GHz were measured with the Ti/Au contacts, the highest yet achieved on III-V nitride FETs. The improvement in the frequency response was mainly due to the decrease in the gate length (0.12 μm). In addition, the effects of high contact resistances at high frequency are discussed.
Keywords :
contact resistance; frequency response; millimetre wave field effect transistors; ohmic contacts; 0.12 micron; 103 GHz; 46.9 GHz; III-V nitride HFET; III-V nitride wafer; Ti-Au; Ti/Au ohmic contact; frequency response; high contact resistances; Annealing; Contact resistance; Electrical resistance measurement; Gallium nitride; Gold; HEMTs; III-V semiconductor materials; MODFETs; Monitoring; Ohmic contacts;
Journal_Title :
Electron Device Letters, IEEE
