0.1-μm T-gate Al-free InP/InGaAs/InP pHEMTs for W-band applications using a nitrogen carrier for LP-MOCVD growth

Author

Schimpf, K. ; Sommer, Martin ; Horstmann, M. ; Hollfelder, M. ; van der Hart, A. ; Marso, M. ; Kordos, P. ; Luth, H.

Author_Institution

Res. Centre Julich, Germany

Volume

18

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

144

Lastpage

146

Abstract

We report on the DC and RF performance of HEMTs based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated. We demonstrate that optimum DC and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies f_T=160 GHz and f_max=260 GHz for a 0.1-μm T-gate device indicate the suitability of our devices for W-band applications.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; vapour phase epitaxial growth; 0.1 micron; 0.1-/spl mu/m T-gate; 160 GHz; 260 GHz; Al-free material system; DC performance; InP-InGaAs-InP; InP/InGaAs/InP pHEMT; LP-MOCVD growth; N carrier; RF performance; T-gate PHEMT; W-band applications; channel composition; gate length; highly strained channels; pseudomorphic HEMT; Chemicals; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lithography; Nitrogen; Radio frequency; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.563310

Filename

563310