Title :
In/sub 0.52/Al/sub 0.48/As/InAs/InxAl/sub 1-x/As pseudomorphic HEMT´s on InP
Author :
Chin, A. ; Liao, C.C. ; Tsai, Chia-Yin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/1997 12:00:00 AM
Abstract :
The DC and microwave performance of an InAs channel HEMT is reported. Room-temperature electron mobility as high as 20200 cm2/Vs is measured, with a high carrier concentration of 2.7×10/sup 12/ cm/sup -2/. DC extrinsic transconductance of 714 mS/mm is measured and a unity-current-gain cut-off frequency of 50 GHz is obtained for a 1.1-μm gate length HEMT. The success of achieving superior Hall mobility and device performance is strongly dependent on the In/sub x/Al/sub 1-x/As buffer layer design that changes the lattice constant from lattice-matched In/sub 0.52/Al/sub 0.48/As to In/sub 0.75/Al/sub 0.25/As. The multiple In/sub 0.52/Al/sub 0.48/As/InAs monolayer superlattices buffer achieves the best performance as compared to the step-graded In/sub x/Al/sub 1-x/As and the uniform In/sub 0.76/Al/sub 0.25/As buffer.
Keywords :
Hall mobility; III-V semiconductors; aluminium compounds; carrier density; electron mobility; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor superlattices; 1.1 micron; 50 GHz; DC performance; Hall mobility; In/sub 0.52/Al/sub 0.48/As-InAs-InAlAs; In/sub x/Al/sub 1-x/As buffer layer design; InAs channel HEMT; InP substrate; microwave performance; monolayer superlattices buffer; pseudomorphic HEMT; Buffer layers; Cutoff frequency; Electron mobility; Frequency measurement; HEMTs; Hall effect; Lattices; Length measurement; Measurement units; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
