Title :
Low-threshold room-temperature CW operation of ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates
Author :
Nakanishi, F. ; Doi, Hidenobu ; Okuda, N. ; Matsuoka, T. ; Katayama, Kengo ; Saegusa, A. ; Matsubara, H. ; Yamada, Tomoaki ; Uemura, Toshifumi ; Irikura, M. ; Nishine, S.
Author_Institution :
Basic High-Technol. Labs., Sumitomo Electr. Ind. Ltd., Osaka
fDate :
3/5/1998 12:00:00 AM
Abstract :
SCH laser structures of ZnCdSe/ZnSe/ZnMgSSe have been grown on conductive ZnSe substrates by molecular beam epitaxy. Continuous-wave laser operation at room temperature was observed at a wavelength of 527.9 nm (2.349 eV). The threshold current and threshold voltage were 44 mA (222 A/cm2) and 5.4 V, respectively. A lifetime of 74 s at a constant light output power of 2 mW was obtained
Keywords :
II-VI semiconductors; cadmium compounds; magnesium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; zinc compounds; 2 mW; 2.349 eV; 44 mA; 5.4 V; 527.9 nm; 74 s; SCH laser structures; ZnCdSe-ZnSe-ZnMgSSe; blue/green laser diodes; light output power; low-threshold room-temperature CW operation; molecular beam epitaxy; threshold current; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980357
