A new calculation approach of transistor noise parameters as a function of gatewidth and bias current

Author

Gasmi, Ahmed ; Huyart, Bernard ; Bergeault, Eric ; Jallet, Louis P.

Author_Institution

Dept. Commun., Ecole Nat. Superieure des Telecommun., Paris, France

Volume

45

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

338

Lastpage

344

Abstract

In this paper a new method to calculate the noise parameters of transistors T_i (MESFET or HEMT) as a function of gatewidth and drain-bias current is presented. This method needs the knowledge of the R, P, and C coefficients. It is based on the measurement of the noise parameters of a reference transistor T,_r at two bias points (I_ds1 and I_ds2), and the equivalent circuit elements´ values of all transistors T_i. Using this method, the noise parameters (F_min, Γ_opt, R_n) for two MESFET´s T_i biased at another current I_ds3 are obtained. Good agreement between the predicted and measured noise parameters´ values is obtained for a broad frequency range (4-20 GHz)

Keywords

Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; 4 to 20 GHz; HEMT; MESFET; drain-bias current; equivalent circuit; gatewidth; transistor noise parameters; Circuit noise; Equivalent circuits; Frequency measurement; HEMTs; Integrated circuit measurements; Integrated circuit noise; MESFETs; Noise measurement; Temperature dependence; Temperature sensors;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.563331

Filename

563331