Title :
A Low-Power 40-Gb/s 1:2 Demultiplexer IC Based on a Resonant Tunneling Diode
Author :
Lee, Jooseok ; Lee, Jongwon ; Yang, Kyounghoon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fDate :
5/1/2012 12:00:00 AM
Abstract :
A low-power 1:2 demultiplexer (DEMUX) IC based on a resonant tunneling diode (RTD) is proposed. In order to achieve low-power consumption, the unique negative differential resistance (NDR) characteristics arising from the quantum effect of the RTD are exploited. The proposed DEMUX IC consists of an return to zero (RZ)-mode 1:2 demultiplexing block and an RZ-to-nonreturn to zero converting block, which have a compact structure based on the NDR-based circuit topologies. By implementing the proposed IC using an InP RTD/heterojunction bipolar transistor monolithic microwave integrated circuit technology, 1:2 demultiplexing operation up to 40 Gb/s has been achieved with low-power consumption of 61 mW. In addition, the result is the first demonstration of a 40-Gb/s-level current-mode-logic-type DEMUX IC based on the NDR topology.
Keywords :
MMIC; demultiplexing; demultiplexing equipment; heterojunction bipolar transistors; integrated circuit technology; negative resistance devices; resonant tunnelling diodes; InP RTD-heterojunction bipolar transistor; NDR topology; NDR-based circuit topologies; RZ-to-nonreturn to zero converting block; current-mode-logic-type DEMUX IC; demultiplexer IC; low power consumption; monolithic microwave integrated circuit technology; negative differential resistance; power 61 mW; quantum effect; resonant tunneling diode; return to zero mode; Clocks; Demultiplexing; Heterojunction bipolar transistors; Integrated circuits; Power demand; Resonant tunneling devices; Topology; Demultiplexing; negative differential resistance (NDR); quantum effect; resonant tunneling diode (RTD);
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2011.2171988
