A novel InGaP/GaAs S-shaped negative-differential-resistance (NDR) switch for multiple-valued logic applications

Author

Liu, Wen-Chau ; Tsai, Jung-Hui ; Lour, Wen-Shiung ; Laih, Lih-Wen ; Cheng, Shiou-Ying ; Thei, Kong-Beng ; Wu, Cheng-Zu

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

44

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

520

Lastpage

525

Abstract

In this paper, a novel InGaP/GaAs multiple S-shaped negative-differential-resistance (NDR) switch based on a heterostructure-emitter bipolar transistor (HEBT) structure is fabricated and demonstrated. An interesting multiple NDR phenomenon resulting from an avalanche multiplication and successive two-stage barrier lowering process is observed under the inverted operation mode. The three-terminal-controlled and temperature-dependent NDR characteristics are also investigated. In addition, a typical transistor performance is found under the normal operation mode. Consequently, owing to the presented different stable operation points and transistor action, the studied device shows a good potential for multiple-valued logic and analog amplification circuit applications

Keywords

III-V semiconductors; bipolar transistor switches; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; multivalued logic; negative resistance devices; InGaP-GaAs; S-shaped negative-differential-resistance switch; analog amplification circuit; avalanche multiplication; barrier lowering; heterostructure-emitter bipolar transistor; inverted operation; multiple-valued logic; Bipolar transistors; Complexity theory; Conducting materials; Gallium arsenide; Heterojunction bipolar transistors; Lattices; Logic circuits; Logic devices; MOCVD; Switches;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.563353

Filename

563353