Determination of bit-rate and sensitivity limits of an optimized p-i-n/HBT OEIC receiver using SPICE simulations

Author

Kim, Moon Jung ; Kim, Dae Keun ; Kim, Sung June ; Das, Mukunda B.

Author_Institution

Dept. of Electron. Eng., Seoul Nat. Univ., South Korea

Volume

44

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

551

Lastpage

558

Abstract

The sensitivity of an OEIC receiver depends essentially on the physical sources of device and circuit noise referred to its input, provided that the inter-symbol interference (ISI) makes no significant contribution. For well designed receivers, the latter situation can be realized only at an optimum bandwidth (f_{3 dB.opt}) for a given bit rate (B) or vice versa. In this paper, we have determined the relationship between the bit rate and the 3-dB bandwidth for negligible and pre-set levels of ISI for an optimized p-i-n/HBT transimpedance receiver with adjustable bandwidth. We have used SPICE simulations in the frequency domain to determine the effect of device and circuit noise, and SPICE transient analysis to determine the effect of ISI on the sensitivity. The ratio f_{3 dB.opt}/B has been found to vary from 0.65 to 0.45 when B changes from 10 to 20 Gbps for the OEIC receiver used

Keywords

SPICE; bipolar integrated circuits; circuit analysis computing; circuit optimisation; frequency-domain analysis; integrated circuit noise; integrated optoelectronics; intersymbol interference; optical receivers; p-i-n photodiodes; photodetectors; semiconductor device noise; sensitivity; transient analysis; 10 to 20 Gbit/s; 3-dB bandwidth; SPICE simulations; SPICE transient analysis; adjustable bandwidth; bit-rate limit; circuit noise; device noise; frequency domain; inter-symbol interference; optimized p-i-n/HBT OEIC receiver; optimum bandwidth; sensitivity limit; transimpedance receiver; Analytical models; Bandwidth; Bit rate; Circuit noise; Circuit simulation; Heterojunction bipolar transistors; Intersymbol interference; Optoelectronic devices; PIN photodiodes; SPICE;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.563357

Filename

563357