Title :
Uniform and high performance of monolithically integrated 1×12 array of planar GaInAs photodiodes
Author :
Ho, Wen-Jeng ; Wu, Meng-Chyi ; Tu, Yuan-Kuang
Author_Institution :
Res. Inst. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
4/1/1997 12:00:00 AM
Abstract :
In this article, we describe the fabrication of a monolithically integrated 1×12 array of GaInAs/InP planar photodiodes, which has highly uniform characteristics in dark current, capacitance and crosstalk capacitance, quantum efficiency, and the frequency bandwidth at 3-dB reduction with a deviation of ±1%. Besides, each diode on the array exhibits an extremely low dark current of 75 pA, a low capacitance of ~2.3 pF and a crosstalk capacitance between adjacent diodes of ~0.36 pF, a high quantum efficiency of 95% at 1.3 μm and 89% at 1.53 μm, the 3-dB frequency of >2 GHz, and a small 1/f noise component over a wide operating voltage range. Also, the diode on the array has a negligible degradation after the burn-in test of -20 V, 200°C, and 20 h
Keywords :
1/f noise; III-V semiconductors; arrays; capacitance; crosstalk; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; photodiodes; semiconductor device noise; semiconductor device testing; -20 V; 0.36 pF; 1.3 mum; 1.53 mum; 1/f noise component; 2 GHz; 2.3 pF; 20 hour; 200 C; 3-dB frequency; 75 pA; 89 percent; 95 percent; GaInAs-InP; GaInAs/InP planar photodiodes; InP; burn-in test; capacitance; crosstalk capacitance; current noise spectra; dark current; frequency bandwidth; monolithically integrated 1×12 array; optical fiber communication; parallel optical transmission; photoresponsivity; quantum efficiency; reverse I-V characteristic; uniform characteristics; Bandwidth; Crosstalk; Dark current; Diodes; Fabrication; Frequency; Indium phosphide; Photodiodes; Quantum capacitance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
