Title :
Potential design and transport property of 0.1-μm MOSFET with asymmetric channel profile
Author :
Odanaka, Shinji ; Hiroki, Akira
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
4/1/1997 12:00:00 AM
Abstract :
This paper describes potential design and transport property of a 0.1-μm n-MOSFET with asymmetric channel profile, which is formed by the tilt-angle ion-implantation after gate electrode formation. The relation between device performance and transport property of the asymmetric 0.1-μm device is explored by Monte Carlo simulations, and measured electrical characteristics. The self-consistent Monte Carlo device simulation coupled with a process simulator reveals higher electron velocity at the source end of the channel and velocity overshoot at the source side of the channel, and the smaller high-energy tail of the distribution in the drain. This transport property creates high drain current, large transconductance, and low substrate current of the 0.1-μm n-MOSFET with asymmetric channel profile
Keywords :
MOSFET; Monte Carlo methods; doping profiles; ion implantation; semiconductor device models; 0.1 micron; MOSFET; Monte Carlo simulations; asymmetric channel profile; device performance; drain current; electron velocity; gate electrode formation; high-energy tail; substrate current; tilt-angle ion-implantation; transconductance; transport property; velocity overshoot; Boron; Electric variables; Electric variables measurement; Electrodes; Fabrication; Implants; MOSFET circuits; Monte Carlo methods; Poisson equations; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
