Potential design and transport property of 0.1-μm MOSFET with asymmetric channel profile

Author

Odanaka, Shinji ; Hiroki, Akira

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

44

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

595

Lastpage

600

Abstract

This paper describes potential design and transport property of a 0.1-μm n-MOSFET with asymmetric channel profile, which is formed by the tilt-angle ion-implantation after gate electrode formation. The relation between device performance and transport property of the asymmetric 0.1-μm device is explored by Monte Carlo simulations, and measured electrical characteristics. The self-consistent Monte Carlo device simulation coupled with a process simulator reveals higher electron velocity at the source end of the channel and velocity overshoot at the source side of the channel, and the smaller high-energy tail of the distribution in the drain. This transport property creates high drain current, large transconductance, and low substrate current of the 0.1-μm n-MOSFET with asymmetric channel profile

Keywords

MOSFET; Monte Carlo methods; doping profiles; ion implantation; semiconductor device models; 0.1 micron; MOSFET; Monte Carlo simulations; asymmetric channel profile; device performance; drain current; electron velocity; gate electrode formation; high-energy tail; substrate current; tilt-angle ion-implantation; transconductance; transport property; velocity overshoot; Boron; Electric variables; Electric variables measurement; Electrodes; Fabrication; Implants; MOSFET circuits; Monte Carlo methods; Poisson equations; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.563364

Filename

563364