LOCOS-induced stress effects on thin-film SOI devices

Author

Huang, Cheng-Liang ; Soleimani, Hamid R. ; Grula, Gregory J. ; Sleight, Jeffrey W. ; Villani, Angelo ; Ali, Hassan ; Antoniadis, Dimitri A.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

Volume

44

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

646

Lastpage

650

Abstract

LOCOS-induced stress effects on thin-film SOI devices are investigated. We show that as the field oxide thickness increases, degradation (enhancement) of nMOSFET´s (pMOSFET´s) I-V characteristics becomes increasingly pronounced. The total degradation or enhancement of I-V characteristics can reach ~40% of drive current for devices under certain processing conditions. Estimated stress results using four-point bending measurement show that the stress level on the silicon film is of order 1200 MPa for devices with ~40% of I-V degradation/enhancement. We attribute the stress phenomenon to the volumetric expansion of field oxide during the LOCOS process

Keywords

MOSFET; bending; internal stresses; isolation technology; oxidation; silicon-on-insulator; I-V characteristics degradation; I-V characteristics enhancement; LOCOS-induced stress effects; MOS transistors; Si film; Si-SiO₂; drive current; dual doped polysilicon gate CMOS process; field oxide; field oxide thickness increases; four-point bending measurement; isolation induced stress effects; nMOSFET I-V characteristics; pMOSFET I-V characteristics; stress level; thin-film SOI devices; volumetric expansion; Capacitive sensors; Fabrication; Implants; MOSFET circuits; Oxidation; Silicon on insulator technology; Strain measurement; Stress measurement; Thermal degradation; Thin film devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.563370

Filename

563370