Title :
LOCOS-induced stress effects on thin-film SOI devices
Author :
Huang, Cheng-Liang ; Soleimani, Hamid R. ; Grula, Gregory J. ; Sleight, Jeffrey W. ; Villani, Angelo ; Ali, Hassan ; Antoniadis, Dimitri A.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fDate :
4/1/1997 12:00:00 AM
Abstract :
LOCOS-induced stress effects on thin-film SOI devices are investigated. We show that as the field oxide thickness increases, degradation (enhancement) of nMOSFET´s (pMOSFET´s) I-V characteristics becomes increasingly pronounced. The total degradation or enhancement of I-V characteristics can reach ~40% of drive current for devices under certain processing conditions. Estimated stress results using four-point bending measurement show that the stress level on the silicon film is of order 1200 MPa for devices with ~40% of I-V degradation/enhancement. We attribute the stress phenomenon to the volumetric expansion of field oxide during the LOCOS process
Keywords :
MOSFET; bending; internal stresses; isolation technology; oxidation; silicon-on-insulator; I-V characteristics degradation; I-V characteristics enhancement; LOCOS-induced stress effects; MOS transistors; Si film; Si-SiO2; drive current; dual doped polysilicon gate CMOS process; field oxide; field oxide thickness increases; four-point bending measurement; isolation induced stress effects; nMOSFET I-V characteristics; pMOSFET I-V characteristics; stress level; thin-film SOI devices; volumetric expansion; Capacitive sensors; Fabrication; Implants; MOSFET circuits; Oxidation; Silicon on insulator technology; Strain measurement; Stress measurement; Thermal degradation; Thin film devices;
Journal_Title :
Electron Devices, IEEE Transactions on
