DocumentCode
1376850
Title
Simulation of semiconductor devices with non-ideal metallic contacts
Author
Schroeder, Dietmar ; Witkowski, Ulf
Author_Institution
Tech. Electron., Tech. Univ. Hamburg-Harburg, Germany
Volume
44
Issue
4
fYear
1997
fDate
4/1/1997 12:00:00 AM
Firstpage
679
Lastpage
681
Abstract
A comprehensive model of metal-semiconductor contacts that includes both thermionic emission and tunneling effects is reported. The model is particularly suited for the simulation of power devices. As an application example, simulation results of a hybrid Schottky-/pn-diode, also known as Junction Barrier Controlled Schottky Diode (JBS) or Merged pn-Schottky Diode (MPS), are presented
Keywords
Schottky diodes; power semiconductor diodes; semiconductor device models; semiconductor-metal boundaries; thermionic electron emission; tunnelling; Junction Barrier Controlled Schottky Diode; Merged pn-Schottky Diode; hybrid Schottky-/pn-diode; model; nonideal metal-semiconductor contact; power device; semiconductor device; simulation; thermionic emission; tunneling; Boundary conditions; Charge carrier processes; Poisson equations; Schottky barriers; Schottky diodes; Semiconductor devices; Semiconductor diodes; Semiconductor process modeling; Thermionic emission; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.563375
Filename
563375
Link To Document