n-Type Metal-Base Organic Transistor

Author

Yusoff, Abd Rashid bin Mohd ; Song, Ying ; Schulz, Dietmar ; Holz, Eikner ; Shuib, Saiful Anuar

Author_Institution

Dept. de Fis., Univ. Fed. do Parana, Curitiba, Brazil

Volume

11

Issue

2

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

352

Lastpage

354

Abstract

This investigation proposes an Ir(ppy)₃/Ir(mpp)₃ double-emitter heterojuction metal-base transistors grown by vacuum sublimation deposition. The improved structure exhibits the advantages of high ON-to-OFF current ratio 4.98 × 10⁶ and high current gains (β) 355.6. The device survived for almost two months with a slight dropped in these parameters before it is completely gone in four months. Furthermore, this study elucidates the relation between leakage current, current gains, and ON-to-OFF current ratio.

Keywords

bipolar transistors; leakage currents; organic compounds; current gains; double-emitter heterojunction metal-base transistors; improved structure; leakage current; n-type metal-base organic transistor; on-off current ratio; tris(2-phenylpyridinato-N,C2´)iridium (III); tris(3-methyl-2-phenylpyridine)iridium (III); vacuum sublimation deposition; Current measurement; Fabrication; Leakage current; Performance evaluation; Semiconductor device measurement; Silicon; Transistors; Bipolar transistor; iridium complexes; metal-base transistor (MBT);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2011.2173210

Filename

6081978