Photoreflectance characterization on the InAlAs-InGaAs heterojunction bipolar transistors

Author

Chen, Y.H. ; Jan, G.J.

Author_Institution

Dept. of Phys., Nat. Taiwan Inst. of Technol., Taipei, Taiwan

Volume

33

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

574

Lastpage

579

Abstract

Characterization of InAlAs-InGaAs heterojunction bipolar transistors (HBT´s) with different spacer thickness inserted between emitter and base grown by molecular beam epitaxy has been performed by photoreflectance (PR) measurement. Analysis of the PR spectra above the fundamental band edge of InAlAs has enabled us to deduce the built-in electric field at the emitter-base junction, so the energy spike at the emitter side can be obtained. The two-dimensional electron gas (2-DEG) accumulated in the spacer channel has also been characterized. Both parameters mentioned above are very important for the performance of HBT´s electrical characteristics

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; photoreflectance; semiconductor device testing; semiconductor heterojunctions; two-dimensional electron gas; InAlAs-InGaAs; built-in electric field; electrical characteristics; emitter side; emitter-base junction; energy spike; fundamental band edge; heterojunction bipolar transistors; molecular beam epitaxy; photoreflectance characterization; photoreflectance measurement; spacer channel; spacer thickness; transistor performance; two-dimensional electron gas; Electric variables; Electron beams; HEMTs; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Performance evaluation; Thickness measurement; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.563386

Filename

563386