DocumentCode
1377013
Title
Quantum transistors: toward nanoelectronics
Author
Geppert, L.
Volume
37
Issue
9
fYear
2000
fDate
9/1/2000 12:00:00 AM
Firstpage
46
Lastpage
51
Abstract
Electrons that tunnel through insulating barriers and hop on and off minuscule dots are shown to be at the heart of future transistor generations
Keywords
Coulomb blockade; nanotechnology; semiconductor quantum dots; single electron transistors; Coulomb blockade; double-layer tunnelling transistor; electron tunnelling; future transistor generations; insulating barriers; nanoelectronics; quantum dots; quantum transistors; resonant tunnelling diodes; single-electron transistor; Diodes; Electrons; FETs; Heart; Insulation; Nonvolatile memory; Quantum dots; Resonant tunneling devices; Transistors; US Department of Transportation;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/6.866283
Filename
866283
Link To Document