High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors

Author

Lin, Wei-Hsun ; Tseng, Chi-Che ; Chao, Kuang-Ping ; Mai, Shu-Cheng ; Kung, Shu-Yen ; Wu, Shug-Yi ; Lin, Shih-Yen ; Wu, Meng-Chyi

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

23

Issue

2

fYear

2011

Firstpage

106

Lastpage

108

Abstract

A ten-period GaSb/GaAs quantum-dot infrared photodetector (QDIP) is investigated in this letter. A broad detection window 2-5 μm with peak responses at ~ 3.7 μm is observed. Compared with the 4- to 8-μm detection window of a standard InAs/GaAs QDIP, the detection wavelengths of the GaSb/GaAs QDIP are shifted to the 2- to 5- μm range such that water absorption is avoided. The enhanced normal incident absorption of the GaSb QDIP is attributed to its smaller sizes compared with InAs QDs. Without additional high-bandgap barrier layers, the 200 K spectral response of the simple stacked GaSb/GaAs QDIP has already been observed, which has demonstrated the potential for practical applications of the GaSb/GaAs QDIPs.

Keywords

III-V semiconductors; gallium arsenide; infrared detectors; photodetectors; quantum dots; GaSb-GaAs; detection wavelengths; high temperature operation; quantum dot infrared photodetectors; Absorption; Gallium arsenide; Ocean temperature; Photoconductivity; Photodetectors; Photonics; Quantum dots; Quantum-dot infrared photodetectors (QDIPs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2091949

Filename

5634075