Title :
CW operation of a diode cascade InGaAs quantum well VCSEL
Author :
Schmid, W. ; Wiedenmann, D. ; Grabherr, M. ; Jäger, R. ; Michalzik, R. ; Ebeling, K.J.
Author_Institution :
Dept. of Opto-Electron., Ulm Univ., Germany
fDate :
3/19/1998 12:00:00 AM
Abstract :
A diode cascade vertical cavity surface emitting laser with two active p-n junctions connected in series is demonstrated. Operating in CW mode up to 175 K. Differential quantum efficiency clearly exceeds 100% and a maximum output power of 40 mW is obtained
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; 120 percent; 175 K; 40 mW; CW operation; InGaAs; InGaAs quantum well VCSEL; active p-n junctions; diode cascade QW VCSEL; semiconductor laser; series connected junctions; surface emitting laser; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980414
