Title :
High-power near-diffraction-limited external cavity laser, tunable from 1030 to 1085 nm
Author :
Morgott, S. ; Chazan, P. ; Mikulla, M. ; Walther, M. ; Kiefer, R. ; Braunstein, J. ; Weimann, G.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
3/19/1998 12:00:00 AM
Abstract :
A tunable external cavity semiconductor laser with >1 W CW near-diffraction-limited output power between 1030 and 1085 nm is demonstrated. A tapered power amplifier with novel epilayer structure is used as the gain element. Near the gain peak at 1055 nm an output power of 1.6 W CW is obtained
Keywords :
laser cavity resonators; laser transitions; laser tuning; semiconductor lasers; 1 to 1.6 W; 1030 to 1085 nm; 1055 nm; CW output power; epilayer structure; external cavity laser; high-power laser; near-diffraction-limited laser; tapered power amplifier; tunable semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980442
