Title :
Frequency selective surface from optically excited semiconductor on a substrate
Author :
Vardaxoglou, J.C. ; Lau, P.Y. ; Kearney, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Loughborough Univ. of Technol., UK
fDate :
3/19/1998 12:00:00 AM
Abstract :
A dipole frequency selective surface is electronically printed on to a semiconductor backed by an insulating substrate, by means of an optical excitation. The surface impedance of the plasma-generated array is described in terms of the electron-hole concentration. Concentrations of at least 1018 cm3 are required for a resonant state to be reached. Whereas power is mainly dissipated at ~1017 cm-3. The effect of the insulator thickness is briefly discussed
Keywords :
arrays; electric impedance; frequency selective surfaces; semiconductor plasma; silicon; Si; dipole FSS; electron-hole concentration; electronically printed FSS; frequency selective surface; insulating substrate; insulator thickness; optical excitation; optically excited semiconductor; plasma-generated array; resonant state; surface impedance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980409
