Title :
First DFB GRIN-SCH GaInAs/AlGaInAs 1.55 mu m MBE MQW active layer buried ridge structure lasers
Author :
Blez, M. ; Kazmierski, C. ; Quillec, M. ; Robein, D. ; Allovon, M. ; Sermage, B.
Author_Institution :
Lab. de Bagneux, France
Abstract :
A report is made on the realisation for the first time of DFB GaInAs/AlGaInAs MQW active layer lasers with good static, dynamic and spectral performances; threshold currents as low as 13 mA are reported, and a maximum resonant frequency of 9.4 GHz is observed at only 6.6 mW power output. These values compare fairly well to those obtained with similar processes in the InGaAsP system and can probably be improved by a further optimisation of the structure.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gradient index optics; indium compounds; semiconductor junction lasers; 1.55 micron; 13 mA; 6.6 mW; 9.4 GHz; DFB GRIN-SCH; GaInAs-AlGaInAs laser; III-V semiconductors; MBE MQW active layer; buried ridge structure lasers; maximum resonant frequency; power output; semiconductor lasers; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910059
