Title :
AlN/GaN insulated gate heterostructure FET with regrown n+ GaN ohmic contact
Author :
Kawai, H. ; Hara, M. ; Nakamura, F. ; Imanaga, S.
Author_Institution :
Res. Center, Sony Corp., Yokohama, Japan
fDate :
3/19/1998 12:00:00 AM
Abstract :
An AlN/GaN insulated gate heterostructure FET is presented. An n +GaN channel is placed on a thick Al0.15Ga0.85N layer and is covered by a 4 nm thick AlN insulator layer. The FET has a threshold voltage of near 0 V. A G m of 220 mS/mm for a 1.4 μm gate length was obtained
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium compounds; ohmic contacts; 1.4 micron; 4 nm; AlN-GaN; gate length; insulated gate heterostructure FET; regrown ohmic contact; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980464
