Title :
Characterisation of Schottky junctions on In0.235Ga0.765As0.536P0.464 lattice-matched to GaAs
Author :
Sugino, T. ; Kousaka, T.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
fDate :
3/19/1998 12:00:00 AM
Abstract :
InGaAsP Schottky junctions are formed with various metals such as Au, Cu and Ag. Schottky barrier heights as high as 0.98 eV are obtained. Irrespective of the Schottky metals used. From the contact potential difference, estimated using Kelvin probe measurement, it is found that the Fermi level is pinned at the surface of InGaAsP treated by wet-etching. The thermal stability of InGaAsP Schottky junctions is examined. An effective Schottky barrier height of >0.98 eV is maintained at an annealing temperature as high as 250°C
Keywords :
Fermi level; III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; annealing; contact potential; etching; gallium arsenide; indium compounds; 0.98 eV; 250 degC; Fermi level; InGaAsP-GaAs; Kelvin probe measurement; MESFETs; Schottky junctions; annealing temperature; barrier heights; contact potential difference; thermal stability; wet-etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980456
