• DocumentCode
    1377549
  • Title

    Characterisation of Schottky junctions on In0.235Ga0.765As0.536P0.464 lattice-matched to GaAs

  • Author

    Sugino, T. ; Kousaka, T.

  • Author_Institution
    Dept. of Electr. Eng., Osaka Univ., Japan
  • Volume
    34
  • Issue
    6
  • fYear
    1998
  • fDate
    3/19/1998 12:00:00 AM
  • Firstpage
    595
  • Lastpage
    597
  • Abstract
    InGaAsP Schottky junctions are formed with various metals such as Au, Cu and Ag. Schottky barrier heights as high as 0.98 eV are obtained. Irrespective of the Schottky metals used. From the contact potential difference, estimated using Kelvin probe measurement, it is found that the Fermi level is pinned at the surface of InGaAsP treated by wet-etching. The thermal stability of InGaAsP Schottky junctions is examined. An effective Schottky barrier height of >0.98 eV is maintained at an annealing temperature as high as 250°C
  • Keywords
    Fermi level; III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; annealing; contact potential; etching; gallium arsenide; indium compounds; 0.98 eV; 250 degC; Fermi level; InGaAsP-GaAs; Kelvin probe measurement; MESFETs; Schottky junctions; annealing temperature; barrier heights; contact potential difference; thermal stability; wet-etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980456
  • Filename
    674310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1377549