Title :
Reliable lifetime prediction in deep submicrometre P-channel partially depleted SOI MOSFETs
Author :
Renn, S.H. ; Pelloie, J.L. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France
fDate :
3/19/1998 12:00:00 AM
Abstract :
Two-stage hot-carrier-induced degradations are thoroughly investigated in deep submicrometre partially depleted P-channel SIMOX MOSFETs. A reliable method for lifetime prediction is proposed for a wide gate length range. The saturation level between the power and logarithmic laws, which depends on the various degradation mechanisms, plays an important role in device lifetime prediction
Keywords :
MOSFET; SIMOX; extrapolation; hot carriers; semiconductor device reliability; SIMOX; deep submicrometre P-channel devices; degradation mechanisms; gate length range; lifetime prediction; logarithmic laws; partially depleted SOI MOSFETs; power laws; saturation level; two-stage hot-carrier-induced degradations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980455
