Title :
Sidegating effect of GaN MESFETs grown on sapphire substrate
Author :
Egawa, T. ; Ishikawa, Hiroshi ; Jimbo, Toshihiko ; Umeno, Masayoshi
Author_Institution :
Res. Center for Micro-Struct. Devices, Nagoya Inst. of Technol.
fDate :
3/19/1998 12:00:00 AM
Abstract :
A GaN metal semiconductor field effect transistor (MESFET) with 2 μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585 cm2/V·s with a carrier concentration of 1.1×10 17 cm-3 at 300 K, and 1217 cm2/V·s with 2.4×1016 cm-3 at 77K. A GaN MESFET showed a transconductance of 31mS/mm and a drain-source current of 288 mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron density; electron mobility; gallium compounds; sapphire; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 2 micron; 200 micron; 300 K; 77 K; Al2O3; GaN-Al2O3; III-V semiconductors; MESFETs; carrier concentration; drain-source current; electron mobilities; gate-length; gate-width; negative bias; sidegating effect; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980423
