In(As,Sb) superlattice-based emitters for mid-IR wavelengths

Author

Phillips, C.C.

Author_Institution

Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

144

Issue

5

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

262

Lastpage

265

Abstract

Optical, magneto-optical and time-resolved spectroscopies indicate that arsenic-rich InAs-InAs_1-xSb_x strained-layer superlattices have a pronounced type-II offset, with electrons confined to the alloy layers, encouragingly high radiative efficiencies at wavelengths well into the midinfrared, and exhibit suppression of Auger recombination. LEDs operating at 3-10 μm now give room temperature powers of 30 μW and are probably at present limited by inadequate electron confinement

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; indium compounds; infrared sources; infrared spectra; light emitting diodes; magneto-optical effects; semiconductor superlattices; time resolved spectra; 3 to 10 mum; 30 muW; Auger recombination suppression; InAs-InAsSb; InAsSb superlattice-based emitters; LEDs; alloy layer confined electrons; arsenic-rich InAs-InAs_1-xSb_x strained-layer superlattices; high radiative efficiencies; inadequate electron confinement; magneto-optical spectroscopies; mid-IR wavelengths; room temperature powers; time-resolved spectroscopies; type-II offset;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19971380

Filename

674325