Growth and characterisation of mid-IR InAs0.9Sb0.1 -InAs strained multiple quantum well light emitting diodes grown on InAs substrates

Molecular beam epitaxy (MBE) has been used to grow strained multiple quantum well InAs_0.9Sb_0.1 light-emitting diodes (LEDs) lattice matched on InAs substrates. The LEDs exhibit room-temperature infrared emission at 3.4 μm and can be used to fabricate low cost sensors for the detection or monitoring of any C-H containing compound. The compositional dependence of InAsSb on the As ₂ over Sb₄ flux ratio has been examined and could be fitted using an empirical expression based on the As₂ and Sb₄ fluxes and on their relative sticking coefficients. Electroluminescence has been measured at room temperature and at liquid nitrogen temperature. The low temperature spectra peak at 3.4 μm (InAs) and at 3.8 μm (InAs_0.9Sb_0.1). At room temperature only InAs emission is observed. The external efficiencies at room temperature were 1.0×10^-4, and the maximum output power was 27.5 μW under pulsed operation at 740 mA (30 kHz, 0.6% duty cycle)