TID in a Switched-Capacitor FPAA: Degradation and Partial Inactivity Windows Due to Compensating Effects in MOS Transistors

Author

Balen, Tiago R. ; Vaz, Rafael G. ; Cardoso, Guilherme S. ; Gonçalez, Odair L. ; Lubaszewski, Marcelo S.

Author_Institution

Univ. Fed. do Rio Grande do Sul-UFRGS, Porto Alegre, Brazil

Volume

58

Issue

6

fYear

2011

Firstpage

2883

Lastpage

2889

Abstract

Results of irradiation experiments on a 0.6 μm switched-capacitor analog array indicate a sudden recovery of the FPAA performance degradation during the irradiation phase. The main parameter considered to check the performance of the device is the total harmonic distortion of the processed analog signals. The observed recovery is associated with the compensating effects of oxide and interface trapped charge in the NMOS transistors of the array in a particular window of the accumulated dose received by the device. Experimental results are discussed and simulations performed to confirm the hypotheses for the observed phenomenon.

Keywords

MOSFET; capacitors; field ionisation; field programmable analogue arrays; gamma-ray effects; interface states; switched capacitor networks; FPAA; MOS transistors; NMOS transistors; Partial Inactivity Windows; field programmable analog arrays; gamma-ray source; interface trapped charge; irradiation phase; switched capacitor; total harmonic distortion; total ionizing dose; Annealing; Degradation; Field programmable analog arrays; Logic gates; MOSFETs; Radiation effects; Total harmonic distortion; Field programmable analog arrays (FPAAs); inactivity windows; radiation effects; total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2172464

Filename

6082426