Title :
2.5 μm light-emitting diodes in InAs0.36Sb0.20 P0.44/InAs for HF detection
Author :
Krier, A. ; Mao, Y.
Author_Institution :
Sch. of Phys. & Chem., Lancaster Univ., UK
fDate :
10/1/1997 12:00:00 AM
Abstract :
The quaternary alloy InAs1-xSbxPy, lattice-matched to InAs, is a promising material for the production of infrared light sources for the detection of pollutant/nuisance gases in the 2-5 μm region of the spectrum. The authors report on the growth of lnAs0.36Sb0.20P0.44 by liquid phase epitaxy (LPE) onto InAs substrates. The material exhibits good luminescence efficiency and has excellent optical characteristics, making it suitable for use in optoelectronic devices. Surface-emitting LEDs were fabricated and efficient room temperature infrared emission at 2.5 μm was obtained from homojunction p-i-n diodes. These sources can be effectively used as the basis of an optical sensor for the environmental monitoring of HF gas at 2.5 μm in various applications
Keywords :
III-V semiconductors; air pollution measurement; gas sensors; indium compounds; infrared sources; light emitting diodes; liquid phase epitaxial growth; optical materials; optical sensors; semiconductor growth; spectrochemical analysis; 2 to 5 mum; 2.5 mum; HF; HF detection; HF gas; IR detectors; InAs substrates; InAs0.36Sb0.20P0.44-InAs; InAs0.36Sb0.20P0.44/InAs; InAs1-xSbxPy; LPE; environmental monitoring; good luminescence efficiency; homojunction p-i-n diodes; infrared light sources; lattice-matched; light-emitting diodes; liquid phase epitaxy; optical characteristics; optical sensor; optoelectronic devices; pollutant gas detection; quaternary alloy; surface-emitting LEDs;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19971390
