Title :
430 kHz Vertical p-Type Radio Frequency Metal-Base Transistor
Author :
Yusoff, Abd Rashid bin Mohd ; Da Silva, Wilson Jose ; Song, Ying ; Holz, Eikner ; Schulz, Dietmar ; Shuib, Saiful Anuar
Author_Institution :
Dept. de Fis., Univ. Fed. do Parana, Curitiba, Brazil
Abstract :
This paper reports the radio frequency (RF) and direct current performance of organic metal-base transistors using double emitter hole injection layers. We report on transistors exhibiting a cutoff frequency (fT) of 430 kHz at room temperature. Besides the cutoff frequency, other important key parameters for RF transistors are current gain and on /off current ratio, which are 293.46 and 50.5, respectively.
Keywords :
transistors; RF transistors; current gain; cutoff frequency; direct current performance; double emitter hole injection layers; frequency 430 kHz; on-off current ratio; organic metal-base transistor; temperature 293 K to 298 K; vertical p-type radiofrequency metal-base transistor; Cutoff frequency; Electrodes; Radio frequency; Substrates; Time frequency analysis; Transistors; Cutoff frequency; metal-base transistor; radio frequency transistor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2171969
