Strained GaInAs quantum well mid-IR emitters

Author

Zheng, L. ; Lin, C.H. ; Singer, K.E. ; Missous, M.

Author_Institution

Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK

Volume

144

Issue

5

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

360

Lastpage

364

Abstract

Strained GaInAs grown on InP offers an alternative to antimonide-based technology for mid-IR light emitting diodes and lasers operating at wavelengths up to approximately 2.4 microns. Such devices consist of compressively strained GaInAs carrier quantum well, with either lattice-matched or tensile-strained GaInAs carrier confinement barriers, and lattice-matched AlInAs optical confinement layers. The paper explores the wavelength limits which are dictated by the requirements for pseudomorphic growth and adequate carrier confinement. The electrical and optical results obtained from structures emitting at 2.1 and 1.8 microns at room temperature are reported and the data compared with the results of the Van de Walle model solid theory

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; light emitting diodes; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.8 mum; 2.1 mum; 2.4 mum; GaInAs; InP; Van de Walle model solid theory; antimonide-based technology; carrier confinement; compressively strained GaInAs carrier quantum well; lattice-matched AlInAs optical confinement layers; lattice-matched GaInAs carrier confinement barriers; mid-IR light emitting diodes; pseudomorphic growth; room temperature; strained GalnAs quantum well mid-IR emitters; tensile-strained GaInAs carrier confinement barriers; wavelength limits;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19971254

Filename

674342