Title :
Strained GaInAs quantum well mid-IR emitters
Author :
Zheng, L. ; Lin, C.H. ; Singer, K.E. ; Missous, M.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fDate :
10/1/1997 12:00:00 AM
Abstract :
Strained GaInAs grown on InP offers an alternative to antimonide-based technology for mid-IR light emitting diodes and lasers operating at wavelengths up to approximately 2.4 microns. Such devices consist of compressively strained GaInAs carrier quantum well, with either lattice-matched or tensile-strained GaInAs carrier confinement barriers, and lattice-matched AlInAs optical confinement layers. The paper explores the wavelength limits which are dictated by the requirements for pseudomorphic growth and adequate carrier confinement. The electrical and optical results obtained from structures emitting at 2.1 and 1.8 microns at room temperature are reported and the data compared with the results of the Van de Walle model solid theory
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; light emitting diodes; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.8 mum; 2.1 mum; 2.4 mum; GaInAs; InP; Van de Walle model solid theory; antimonide-based technology; carrier confinement; compressively strained GaInAs carrier quantum well; lattice-matched AlInAs optical confinement layers; lattice-matched GaInAs carrier confinement barriers; mid-IR light emitting diodes; pseudomorphic growth; room temperature; strained GalnAs quantum well mid-IR emitters; tensile-strained GaInAs carrier confinement barriers; wavelength limits;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19971254
