Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection

Author

Peng-Chun Peng ; Ruei-Long Lan ; Fang-Ming Wu ; Lin, G. ; Chun-Ting Lin ; Chen, J. ; Gong-Ru Lin ; Sien Chi ; Hao-Chung Kuo ; Chi, J.Y.

Author_Institution

Dept. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan

Volume

22

Issue

3

fYear

2010

Firstpage

179

Lastpage

181

Abstract

This investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The InAs QD VCSEL, fabricated on a GaAs substrate, is grown by molecular beam epitaxy with fully doped distributed Bragg reflectors. The optical characteristics of QD VCSEL without and with light injection are studied in detail. The QD VCSEL has the potential to be used in all-optical signal processing systems.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; light polarisation; molecular beam epitaxial growth; optical fabrication; quantum dot lasers; surface emitting lasers; GaAs; InAs-InGaAs; QD VCSEL; all-optical signal processing; fully doped distributed Bragg reflectors; light injection; molecular beam epitaxial growth; optical polarization; quantum dot vertical-cavity surface-emitting laser; High speed optical techniques; Molecular beam epitaxial growth; Optical distortion; Optical polarization; Optical signal processing; Photonics; Quantum dots; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Quantum dots (QDs); vertical-cavity surface-emitting lasers (VCSELs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2037332

Filename

5373911