• DocumentCode
    1377823
  • Title

    Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs

  • Author

    Grassi, Roberto ; Gnudi, Antonio ; Gnani, Elena ; Reggiani, Susanna ; Baccarani, Giorgio

  • Author_Institution
    Dept. of Electr., Comput., & Syst. Eng., Univ. of Bologna, Bologna, Italy
  • Volume
    10
  • Issue
    3
  • fYear
    2011
  • fDate
    5/1/2011 12:00:00 AM
  • Firstpage
    371
  • Lastpage
    378
  • Abstract
    A mode space (MS) tight binding approach for the simulation of armchair graphene nanoribbon FETs is discussed. It makes use of slab-dependent modes and a novel criterion for mode selection, going beyond the one based on the lowest energy subbands. For ideal ribbons, we show that by splitting the modes into decoupled groups, the new method provides results almost identical to the real space (RS) with a speedup of more than one order of magnitude. Even in the presence of edge roughness, which tends to couple the modes, the MS approach still offers a sizable computational advantage with respect to the RS, while retaining a good accuracy.
  • Keywords
    field effect transistors; graphene; nanostructured materials; tight-binding calculations; C; armchair graphene nanoribbon FET; edge roughness; energy subbands; mode selection; mode space tight binding; mode splitting; slab-dependent modes; Art; Automotive materials; Computational geometry; Effective mass; Electrons; FETs; Iron; Nanoscale devices; Permission; Slabs; Graphene nanoribbon (GNR) FETs; mode-space (MS) approach; nonequilibrium Green’s functions (NEGF); tight binding (TB) Hamiltonian;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2009.2038154
  • Filename
    5373922