Title :
160 nm continuous tuning of an MQW laser in an external cavity across the entire 1.3 mu m communications window
Author :
Seltzer, C.P. ; Bagley, M. ; Elton, D.J. ; Perrin, S. ; Cooper, D.M.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
A tuning range of 160 nm has been demonstrated with an InGaAsP/InP MQW laser in a grating extended cavity across the 1.3 mu m optical fibre communications window. The device tuned continuously from 1.255 mu m to 1.417 mu m with a CW power output of over 40 mW at 1.336 mu m.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser tuning; optical communication equipment; semiconductor junction lasers; 1.255 to 1.417 micron; 1.3 micron; 40 mW; III-V semiconductor; InGaAsP-InP laser; MQW laser; continuous tuning; external cavity; grating extended cavity; optical fibre communications window;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910060
