Title :
Wavelength dependence of temporal response of high-speed GaInAs/AlInAs superlattice photodiodes
Author :
Minot, C. ; Le Person, H. ; Palmier, J.F. ; Allovon, M. ; Esnault, J.C.
Author_Institution :
Lab. de Bagneux, France
Abstract :
A report is made on the temporal response of pin photodiodes, whose intrinsic region is a GaInAs/AlInAs weakly-coupled superlattice designed for 1.55 mu m photoreception. Their response time is shown to depend on the wavelength. The largest bandwidths (up to 22 GHz) are obtained with photon energies above the barrier material bandgap.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; p-i-n diodes; photodetectors; photodiodes; semiconductor superlattices; 1.55 micron; 22 GHz; GaInAs-AlInAs photodiodes; III-V semiconductors; pin photodiodes; superlattice photodiodes; temporal response; wavelength dependence; weakly-coupled superlattice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910061
